The Structure of EEPROM
EEPROM stands for "erasable programmable read-only memory." EEPROM is a type of non-volatile memory, which is memory that does not lose its data when power is disconnected. EEPROM has a unique structure.
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Components
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The EEPROM memory cell contains a variety of components. These include first-level polycilicon (floating gate), second-level polysilicon, gate oxide, field oxide, and p-substrate.
Programming
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EEPROM is programmed through a process called hot electron injection. This process involves forcing electrons, which make up the programmable information, through the thin gate oxide. They are then stored on the floating gate.
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Coding
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When the floating gate is electrically charged, the memory cell is considered to be "programmed," represented by a "0." When the charge is not present, the memory cell is not programmed. This is represented by a "1."
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